| 摘要 |
PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single crystal in which the warpage of the crystal lattice plane is small and the defect density is low and which is prevented from being cracked when it is processed, to provide a method for producing the same, and to provide a silicon carbide single crystal wafer and a silicon carbide single crystal ingot. SOLUTION: The method for producing the silicon carbide single crystal comprises growing the silicon carbide single crystal on a silicon carbide seed crystal 4 mounted on a pedestal 6c, and the method includes: a process for measuring the warpage of the crystal lattice plane of the silicon carbide seed crystal 4; a process for selecting the pedestal 6c made of a material which makes the silicon carbide seed crystal 4 warp in a direction to eliminate the warpage when the single crystal 4 is grown; and a process for mounting the silicon carbide seed crystal 4 on the pedestal 6c. COPYRIGHT: (C)2011,JPO&INPIT |
