发明名称 METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICE
摘要 <p>PURPOSE: A magnetic tunnel junction device manufacturing method is provided to prevent the characteristic deterioration of a magnetic tunnel junction by preventing the generation of a conductive product from a metallic layer. CONSTITUTION: A magnetic tunnel junction layer(27A) is formed on a substrate. An electrode pattern is formed on the magnetic tunnel junction layer. A sacrificial pattern(29) covers the entire surface of the electrode pattern. The magnetic tunnel junction layer is etched by using the sacrificial pattern as an etching barrier wall. The sacrificial pattern is removed.</p>
申请公布号 KR20110002706(A) 申请公布日期 2011.01.10
申请号 KR20090060311 申请日期 2009.07.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PYO, SEUNG SEOK
分类号 G11C11/15;H01L21/8247;H01L27/115 主分类号 G11C11/15
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