| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a resistor for audio which has stable element composition profiles of N, O, Ta, stably contains N in a resistor film, can obtain a TaN film contains less O and has substantial stoichiometry-composition, and is superior in oxidation resistance and reliability. <P>SOLUTION: An insulating film is formed on a substrate, and a resistance film containing the TaN film is formed in a pattern on the insulating film. An interlayer dielectric is formed on the resistance film, and then, the resistance film is annealed at 750-1,100°C. After that, an electrode for drawing resistance which is connected to the resistance film is formed on the interlayer dielectric. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
