| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a reflection type mask, by which an absorption layer pattern having a desired tapered angle is formed relatively easily with high precision in manufacture of a reflection type mask for EUV exposure. <P>SOLUTION: The method of manufacturing the reflection type mask includes a step of forming the absorption layer pattern by forming a hard mask pattern on an absorption layer and subjecting the absorption layer to dry etching using the hard mask pattern as a mask. The method is characterized in that, in the step of dry-etching the absorption layer, bias power is applied to a substrate, the bias power being adjusted to such a level that damage concentrates on an end of the hard mask pattern and the end of the hard mask pattern is set back, and the absorption layer is etched while the end of the hard mask pattern is set back, thereby the absorption layer pattern having the predetermined taper angle is formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
