| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce the size of an IO circuit of each chip in a multilayer chip system from the existing size with maintaining drive capability and ESD resistance capability, and change, in a multilayer system, the number of IOs depending on the number of layers. <P>SOLUTION: In a multilayer chip system, each chip comprises one or more IO groups in each of which the scheduled maximum number of IO channels 207 are collectively connected. The IO channel 207 includes an IO circuit 202 connected to each through via connection pad 201 for IO and a switch circuit 206. Each through via connection pad 201 for IO is connected with an IO terminal on a corresponding position of a chip on another layer by the through via. On an interposer, in the case where the actual number of layers does not reach the scheduled maximum number, connection pads for IO in the respective IO groups neighboring to each other on the interposer are connected by a conductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
