| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which generates plasma having high uniformity. <P>SOLUTION: A plasma processing apparatus includes: a processing container C where plasma processing is performed; an RF generator 14 applying high frequency power to a lower electrode 12 provided at the processing container C; a matching box 15 provided between the RF generator 14 and the lower electrode 12 and connected with the RF generator 14 by using a coaxial cable 16. A bypass path 30, connecting a line 16a on the ground side of the coaxial cable 16 with an upper electrode 11 facing the lower electrode 12, is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
