| 摘要 |
PURPOSE: A light emitting device is provided to improve luminous efficiency by forming a dislocation mode in the upper surface of a first semiconductor layer. CONSTITUTION: A first semiconductor layer(115) is formed on a substrate(105). The first semiconductor layer includes indium(In). A light emitting structure is formed on the first semiconductor layer. An electric potential mode is formed in the upper surface of the first semiconductor layer. An undoped semiconductor layer includes a protrusion part and a recessed part.
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