发明名称 |
FinFET and method of fabricating the same |
摘要 |
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.
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申请公布号 |
US8440517(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20100903712 |
申请日期 |
2010.10.13 |
申请人 |
LIN HUNG-TA;FU CHU-YUN;HUANG SHIN-YEH;YANG SHU-TINE;CHEN HUNG-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN HUNG-TA;FU CHU-YUN;HUANG SHIN-YEH;YANG SHU-TINE;CHEN HUNG-MING |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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