| 摘要 |
A plurality of semiconductor devices (111,122,113) with vertical orientation are separated physically and mutually and are not arranged on the same semiconductor main body or a semiconductor substrate. The semiconductor devices (111,112,113) can be arranged on a substrate (103) produced separately and are used as a thin layer which contains a plurality of doping semiconductor areas; the semiconductor devices are jointed and then are etched to generate each doping superposition structure; alternatively, the semiconductor devices (111,112,113) can be produced before the devices are jointed withthe substrate (103). The doping superposition structure can form the basis of diode, capacitor or transistor device; wherein, an auxiliary layer which can be laminated can include an interconnection line (132). |
