发明名称 |
Structure and method for forming isolation and buried plate for trench capacitor |
摘要 |
A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant. |
申请公布号 |
US8637958(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201213617576 |
申请日期 |
2012.09.14 |
申请人 |
DUBE ABHISHEK;IYER SUBRAMANIAN S.;KHAN BABAR ALI;KWON OH-JUNG;LEE JUNEDONG;PARRIES PAUL C.;PEI CHENGWEN;PFEIFFER GERD;TODI RAVI;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUBE ABHISHEK;IYER SUBRAMANIAN S.;KHAN BABAR ALI;KWON OH-JUNG;LEE JUNEDONG;PARRIES PAUL C.;PEI CHENGWEN;PFEIFFER GERD;TODI RAVI;WANG GENG |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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