发明名称 Photoelectric transfer device
摘要 A photoelectric transfer device in which an electroconductive layer is formed on a surface of an oxide substrate comprising lead component at a ratio of 30-99.5 mol % as PbO and chromium component at a ratio of 0.5-70 mol %, preferably at a ratio of 60-90 mol % as PbO and a chromium component at a ratio of 10-40 mol %.
申请公布号 US4340506(A) 申请公布日期 1982.07.20
申请号 US19790060901 申请日期 1979.07.26
申请人 TDK ELECTRONICS CO., LTD. 发明人 TODA, KOHJI;TAKAHASHI, KOJI;MATSUFUJI, ISAO
分类号 H01L31/032;H01L31/08;(IPC1-7):H01C13/00 主分类号 H01L31/032
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