发明名称 |
Photoelectric transfer device |
摘要 |
A photoelectric transfer device in which an electroconductive layer is formed on a surface of an oxide substrate comprising lead component at a ratio of 30-99.5 mol % as PbO and chromium component at a ratio of 0.5-70 mol %, preferably at a ratio of 60-90 mol % as PbO and a chromium component at a ratio of 10-40 mol %.
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申请公布号 |
US4340506(A) |
申请公布日期 |
1982.07.20 |
申请号 |
US19790060901 |
申请日期 |
1979.07.26 |
申请人 |
TDK ELECTRONICS CO., LTD. |
发明人 |
TODA, KOHJI;TAKAHASHI, KOJI;MATSUFUJI, ISAO |
分类号 |
H01L31/032;H01L31/08;(IPC1-7):H01C13/00 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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