| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing of element breakdown in a termination region.SOLUTION: A semiconductor device includes: a first electrode; a first semiconductor layer of a first conductivity type provided on the first electrode; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a third semiconductor layer of the first conductivity type provided on the second semiconductor layer and having a first-conductivity-type impurity concentration higher than that of the first semiconductor layer; a plurality of gate electrodes provided on the third semiconductor layer via an insulating film; a second electrode electrically connected to the second semiconductor layer and the third semiconductor layer; a first contact region where the second electrode and the second semiconductor layer are electrically connected between the plurality of gate electrodes; and a second contact region where the second electrode and the second semiconductor layer are electrically connected outside the gate electrode provided on an outermost portion of the plurality of gate electrodes and having a wider width than the first contact region.</p> |
