Thin film transistor substrate with intermediate insulating layer and display using the same

摘要

Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

主权项

1. A thin film transistor substrate, comprising:
a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor comprising:
a polycrystalline semiconductor layer;a first gate electrode over the polycrystalline semiconductor layer;a first source electrode; anda first drain electrode; a gate insulating layer covering the polycrystalline semiconductor layer; a second thin film transistor disposed on the substrate over the gate insulating layer, the second thin film transistor comprising:
a second gate electrode;an oxide semiconductor layer on the second gate electrode;a second source electrode; anda second drain electrode; an intermediate insulating layer comprising a nitride layer and disposed on the first gate electrode; and an oxide layer covering the second gate electrode and disposed on the intermediate insulating layer, wherein the oxide semiconductor layer is disposed on the oxide layer and overlaps the second gate electrode, wherein the first source electrode, the first drain electrode, and the second gate electrode are disposed between the intermediate insulating layer and the oxide layer, wherein the second source electrode and the second drain electrode are disposed on the oxide semiconductor layer, wherein a gate line is disposed between the gate insulating layer and the intermediate insulating laver, and wherein a data line and the second gate electrode are disposed between the intermediate insulating layer and the oxide laver.