Method for producing a conductor line

摘要

A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

主权项

1. A method for producing a conductor line of a semiconductor component, the method comprising:
providing a partially completed semiconductor component with a bottom side and a top side, the top side spaced distant from the bottom side in a vertical direction; providing an etchant; arranging a dielectric layer on the top side, the dielectric layer comprising a base material doped with at least one dopant having a varying concentration in the vertical direction, the concentration of the at least one dopant affecting an etch rate of the doped base material when the doped base material is etched with the etchant so that there are at least two different regions with different etch rates when being etched with the etchant; forming a mask layer on the dielectric layer, the mask layer comprising an opening; forming a trench underneath the opening in the dielectric layer by etching the dielectric layer in an anisotropic plasma etch process, thereby using the mask layer as an etching mask such that the trench extends into a first region of the dielectric layer in which the concentration of the at least one dopant has, in the vertical direction, a gradient of at least 1 weight % per μm and intersects each of the at least two different regions, wherein the concentration of the at least one dopant in a different second region of the dielectric layer, in the vertical direction, has a gradient of less than or equal to −1 weight % per μm; widening the trench by etching the trench with the etchant such that the at least two different regions are etched with the different etch rates; and forming the conductor line by filling the widened trench with an electrically conductive material.