| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to set a reference voltage supplied to a bit line when operating a sense amplifier to a center of levels of high data and low data read out of a memory to the bit line.SOLUTION: A semiconductor device includes a sense amplifier SA which compares and amplifies a voltage for a bit line connected to one memory cell selected from among a plurality of memory cells MC and a reference voltage VREF_R. When the reference voltage VREF_R is set, a first potential VARY/2 is applied to the bit line, and a first electric charge is held in the one memory cell selected in a plurality of the memory cells MC. Then, after all of the plurality of memory cells connected to the bit line are unselected, a second potential is applied to the bit line. Then, a third potential corresponding to the first potential held in the one memory cell is controlled to be produced on the bit line, and the reference potential VREF_R is generated based on the third potential. |
