| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a semiconductor stacked structure including at least an electron transit layer and an electron supply layer over a substrate. The electron supply layer includes a first portion and second portions sandwiching the first portion, and the first portion has a higher energy of a conduction band than that of the second portion, and includes a doped portion doped with an n-type impurity and undoped portions that sandwich the doped portion and are not doped with an impurity. |
| 申请公布号 |
US2015357420(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514828995 |
申请日期 |
2015.08.18 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Endoh Akira |
| 分类号 |
H01L29/205;H01L29/778;H01L29/20 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor stacked structure including at least an electron transit layer and an electron supply layer over a substrate; wherein the electron supply layer includes a first portion and second portions sandwiching the first portion; and the first portion has a higher energy of a conduction band than that of the second portion, and includes a doped portion doped with an n-type impurity and undoped portions that sandwich the doped portion and are not doped with an impurity. |
| 地址 |
Kawasaki-shi JP |
