发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR HAVING GETTERING LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
This method for producing a semiconductor having a gettering layer comprises: a film formation step for forming an impurity-containing film on one surface of a semiconductor; and a melting step for melting the semiconductor surface layer by irradiating the semiconductor with laser light from the one surface side. Since the gettering layer is produced by forming a high impurity concentration region by doping the molten semiconductor with an impurity in the melting step, the semiconductor surface layer is able to be doped with the impurity at a high concentration. By doping the molten semiconductor with the impurity at a high concentration, a high impurity concentration region is able to be formed, thereby imparting the semiconductor surface layer with gettering ability. In addition, irradiation of laser light enables processing with a low thermal load. |
申请公布号 |
WO2015186625(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
WO2015JP65554 |
申请日期 |
2015.05.29 |
申请人 |
THE JAPAN STEEL WORKS,LTD. |
发明人 |
SEINO TOSHIAKI;KOBAYASHI NAOYUKI;KUDO TOSHIO |
分类号 |
H01L21/322;H01L21/02;H01L21/22;H01L21/225;H01L21/268;H01L27/12 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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