| 发明名称 |
Method of Manufacturing a Semiconductor Device Comprising Field Stop Zone |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a field stop zone by irradiating a portion of a semiconductor body with a laser beam through a first surface of the semiconductor body. The portion has an oxygen concentration in a range of 5×1016 cm−3 and 5×1017 cm−3. Then the semiconductor body is irradiated with protons through the first surface and annealed in a temperature range of 300° C. to 550° C. |
| 申请公布号 |
US2015357229(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414297764 |
申请日期 |
2014.06.06 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schulze Holger;Schulze Hans-Joachim |
| 分类号 |
H01L21/765;H01L21/265;H01L21/324;H01L21/268 |
主分类号 |
H01L21/765 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a field stop zone comprising hydrogen-vacancy shallow donor complexes by:
irradiating a portion of a semiconductor body with a laser beam through a first surface of the semiconductor body, the portion comprising an oxygen concentration in a range of 5×1016 cm−3 to 5×1017 cm−3;irradiating the semiconductor body with protons through the first surface; andannealing the semiconductor body in a temperature range of 300° C. to 550° C., so as to form the hydrogen-vacancy shallow donor complexes. |
| 地址 |
Neubiberg DE |
