| 摘要 |
PROBLEM TO BE SOLVED: To achieve excellent current collapse characteristics and high breakdown voltage even in a high voltage state.SOLUTION: A field effect transistor comprises: nitride semiconductor layers (3, 4); a source electrode (5) and a drain electrode (6); a gate electrode (7) having a base (7a) which is formed between the source electrode (5) and the drain electrode (6) and has one end electrically connected with the nitride semiconductor layers (3, 4), and a gate field plate part (7b) which extends from the base (7a) to on an insulation film (8); in interlayer insulation film (9); a source wiring electrode (12) connected to the source electrode (5); a drain wiring electrode (13) connected to the drain electrode (6); and a source field plate part (14) and a drain field plate part (15), which extend on the interlayer insulation film (9), in which an end of the source field plate part (14) projects from an end of the gate electrode (7) and an end of the drain field plate part (15) projects from an end of the drain electrode (6). |
