| 发明名称 |
Film Forming Method of SiCN Film |
| 摘要 |
A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R1, R2 and R3 in the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered. |
| 申请公布号 |
US2015348778(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514725147 |
申请日期 |
2015.05.29 |
| 申请人 |
TOKYO ELECTRON LIMITED ;UBE INDUSTRIES, LTD. |
发明人 |
SHIMIZU Akira;MIYAHARA Takahiro;SHIRAI Masashi;SADAIKE Shinichiro |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an SiCN film on a surface to be processed of an object to be processed, the method comprising:
supplying an Si source gas containing an Si source into a processing chamber having the object to be processed accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon, which is represented by the following Chemical Formula 1, is used as the nitriding agent: wherein R1, R2 and R3 are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. |
| 地址 |
Tokyo JP |
