Method and System for Dynamic Word Line Based Configuration of a Three-Dimensional Memory Device

摘要

A memory controller configures a plurality of word lines associated with a respective block of a 3D memory device in a first configuration, where the first configuration includes a set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to a substrate of the 3D memory device and, while the plurality of word lines are configured in the first configuration, writes data to and reads data from the respective block. For the respective block, the memory controller: adjusts a first parameter in the respective set of configuration parameters corresponding to a respective word line of the plurality of word lines in response to detecting a first trigger condition as to the respective word line and, after adjusting the first parameter, writes data to and reads data from the respective word line.

主权项

1. A method of operation in a storage device that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device, the method comprising:
for a first word line of a respective block of the multiple blocks, the first word line having a first vertical position relative to the substrate of the storage device, performing operations including:
determining a first error correction coding (ECC) strength for the first word line according to the first vertical position of the first word line relative to the substrate of the storage device;writing data to the first word line according to the first ECC strength;in response to detecting a first trigger condition as to the first word line, adjusting the first ECC strength corresponding to the first word line; andafter adjusting the first ECC strength corresponding to the first word line, writing data to the first word line according to the adjusted first ECC strength.