| 摘要 |
PROBLEM TO BE SOLVED: To achieve high heat resistance by firmly joining solder to a semiconductor element electrode not only without requiring formation of a thick nickel film but also without generating a Kirkendall void even under a high temperature environment.SOLUTION: A method of manufacturing a semiconductor device is characterized in that, as an electrode of a semiconductor element 10, a titanium layer and a nickel layer are sequentially formed from an element side under no oxygen, and this electrode is die-bonded to a circuit member using solder containing tin, thereby forming an inter-metallic compound 20 composed of a titanium-nickel alloy layer 20a and a titanium-nickel-tin alloy layer 20b of about 50 nm inside of the titanium layer 18 of the electrode and as a result, firmly joining the electrode to the circuit member. |
