发明名称 Semiconductor devices having bit line structures disposed in trenches
摘要 Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided.
申请公布号 US9202775(B2) 申请公布日期 2015.12.01
申请号 US201414178127 申请日期 2014.02.11
申请人 SK HYNIX INC. 发明人 Jung Jin Ki;Kim Myoung Soo
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
主权项 1. A semiconductor device comprising: a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate; and a bit line structure disposed in a trench pattern on the bit line contact plug and extending in a first direction, wherein the trench pattern intrudes into a side of the storage node contact plug.
地址 Icheon KR