发明名称 |
Semiconductor devices having bit line structures disposed in trenches |
摘要 |
Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided. |
申请公布号 |
US9202775(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201414178127 |
申请日期 |
2014.02.11 |
申请人 |
SK HYNIX INC. |
发明人 |
Jung Jin Ki;Kim Myoung Soo |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor device comprising:
a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate; and a bit line structure disposed in a trench pattern on the bit line contact plug and extending in a first direction, wherein the trench pattern intrudes into a side of the storage node contact plug. |
地址 |
Icheon KR |