| 摘要 |
In a semiconductor device using a transistor with an oxide semiconductor, the present invention suppresses the variation of an electrical feature and improves reliability. The transistor includes a first gate electrode, a first insulating layer which is formed on the first gate electrode, an oxide semiconductor layer which is formed on the first insulating layer, a source electrode which is electrically connected to the oxide semiconductor layer, a drain electrode which is electrically connected to the oxide semiconductor layer, a second insulating layer which is formed on the oxide semiconductor layer, the source electrode, and the drain electrode, and a second gate electrode which is formed on the second insulating layer. The second insulating layer includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor layer and has a region thinner than the oxide semiconductor layer. |
