| 主权项 |
1. A plasma vapor deposition system comprising:
a top target electrode disposed in a plasma chamber, wherein the top target electrode comprises a first target material to be deposited, wherein the top target electrode comprises a central region surrounded by a peripheral region; a bottom electrode disposed in the plasma chamber and spaced below the top target electrode; a workpiece holder disposed in the plasma chamber between the top target electrode and the bottom electrode; and at least one auxiliary target electrode disposed in the plasma chamber disposed between the top target electrode and the workpiece holder, the auxiliary target electrode comprising a mesh with a plurality of openings in a plane of the auxiliary target electrode parallel to a major surface of the bottom electrode, wherein the least one auxiliary target electrode comprises a second target material to be deposited, wherein the auxiliary target electrode has a central portion disposed below and overlapping with the central region of the top target electrode and an edge portion disposed below and overlapping with the peripheral region of the top target electrode, wherein a thickness of the auxiliary target electrode in the edge portion is different from a thickness of the auxiliary target electrode in the central portion, wherein the mesh comprises a first layer having first set of openings and a second layer having second set of openings, wherein the second set of openings comprise a central opening having a larger diameter than a diameter of surrounding openings of the second set of openings, wherein the first layer and the second layer are parallel to each other, and wherein the thickness is measured along a direction from the top target electrode to the bottom electrode. |
