| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves reduction in parasitic capacitance between a plurality of transistor pillars and a contact plug.SOLUTION: A semiconductor device comprises: an active region 1A composed of a semiconductor device partitioned by an element isolation regions 2; transistor pillars 5A1-5A5 which are arranged on the active region 1A in a Y direction to erect perpendicular to a principal surface of the semiconductor substrate; a lower diffusion layer 9 provided on a surface of the active region 1A; and first plugs 31A1-31A3 which are provided adjacent to the transistor pillars 5A1-5A5 in an X direction and connected to the lower diffusion layer 9. The first plugs 31A1-31A3 has a rectangular pattern where the X direction is a longer direction. Contact resistance of the first plugs 31A1-31A3 is reduced to reduce parasitic capacitance between the first plugs 31A1-31A3 and the transistor pillars 5A1-5A5. |
