Achieving uniform capacitance between an electrostatic chuck and a semiconductor wafer

摘要

Embodiments of the present invention provide a method for achieving uniform capacitance between a semiconductor wafer and an electrostatic chuck. In certain embodiments, the method comprises the step of forming a layer on a first side of the semiconductor wafer, wherein the layer has a specified resistivity. The method further comprises placing the semiconductor wafer on the electrostatic chuck, wherein the layer contacts the electrostatic chuck. The method further comprises applying a radio frequency signal to the electrostatic chuck, and processing a second side of the semiconductor wafer.

主权项

1. A method for achieving uniform capacitance between an electrostatic chuck and a semiconductor wafer comprising:
forming a layer on a first side of the semiconductor wafer, wherein the layer has a specified resistivity; placing the semiconductor wafer on the electrostatic chuck, wherein the layer contacts the electrostatic chuck, and wherein at least a portion of the layer is positioned between the semiconductor layer and a cooling channel of the electrostatic chuck; and processing a second side of the semiconductor wafer.