| 摘要 |
The present invention relates to a method for performing refresh of a first memory area (121) of a nonvolatile random access memory (120). According to the present invention, at least one additional memory area (140, 150) of the nonvolatile random access memory (120) is overwritten with memory content of the first memory area; a hidden state of at least one additional memory area (140, 150) is canceled for the memory content in a memory address area (130); the first memory area is hidden from the memory address area for the memory content; the first memory area (121) is overwritten with the memory content of at least one additional memory area (140, 150); a hidden state of the first memory area (121) is canceled for the memory content in the memory address area (130); and at least one additional memory area (140, 150) is hidden from the memory address area (130) for the memory content. |
