发明名称 A PRECURSOR SOLUTION FOR FORMING METAL CALCOGENIDE FILMS
摘要 The present specification discloses that the dissolution of a chalcogenide element in a non-explosive hydrazine solvent is possible by adding sodium to the non-explosive hydrazine solvent. Accordingly, in the disclosure, the dissolution of a metal chalcogenide compound through a dimension reduction mechanism was possible even if the non-explosive hydrazine solvent was used. Therefore, in the disclosure, provided is a precursor solution for forming a chalcogenide film containing the non-explosive hydrazine solvent which is less poisonous than hydrazine and has no explosiveness as a solvent.
申请公布号 KR20150128409(A) 申请公布日期 2015.11.18
申请号 KR20140055754 申请日期 2014.05.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, KYUNG SANG
分类号 C23C14/06;C23C16/06 主分类号 C23C14/06
代理机构 代理人
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