METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE

摘要

A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

主权项

1. A method of performing a read operation on a nonvolatile memory device, the read operation comprising:
performing a first read operation, the first read operation including: applying a first read voltage to a first word line connected to first memory cells in the nonvolatile memory device; applying a first pass voltage to a second word line connected to second memory cells in the nonvolatile memory device while the first read voltage is applied to the first word line, the second word line being adjacent to the first word line; and applying a second pass voltage to a third word line connected to third memory cells in the nonvolatile memory device while the first read voltage is applied to the first word line, the second pass voltage being lower than the first pass voltage; performing a second read operation, the second read operation including: applying a second read voltage lower than the first read voltage to the first word line; applying a third pass voltage to the second word line while the second read voltage is applied to the first word line, the third pass voltage being different from the first pass voltage; and applying a fourth pass voltage to the third word line while the second read voltage is applied to the first word line, the fourth pass voltage being substantially the same as the second pass voltage; and performing a third read operation, the third read operation including: applying a third read voltage to the first word line, the third read voltage being different from the first and the second read voltages; applying a fifth pass voltage to the second word line while the third read voltage is applied to the first word line, the fifth pass voltage being substantially the same as the first pass voltage; and applying a sixth pass voltage to the third word line while the third read voltage is applied to the first word line, the sixth pass voltage being substantially the same as the second pass voltage.