| 发明名称 | Memristive devices with layered junctions and methods for fabricating the same | ||
| 摘要 | Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes. | ||
| 申请公布号 | US9184382(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201012914935 | 申请日期 | 2010.10.28 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Pickett Matthew D.;Yang Jianhua;Ribeiro Gilberto Medeiros |
| 分类号 | H01L47/00;H01L45/00 | 主分类号 | H01L47/00 |
| 代理机构 | Olympic Patent Works PLLC | 代理人 | Olympic Patent Works PLLC |
| 主权项 | 1. A memristor comprising: a first electrode; a second electrode; and a junction disposed between the first and second electrodes, wherein the junction includes at least one layer, each layer having a plurality of dopant sub-layers disposed between insulating sub-layers with an insulating sub-layer between each pair of dopant sub-layers, each dopant sub-layer comprising mobile dopants. | ||
| 地址 | Houston TX US | ||