发明名称 スイッチング素子、半導体装置およびそれぞれの製造方法
摘要 <p>The present invention has an ion-conducting layer (11), and a first electrode (21) and a second electrode (22) respectively formed on front and reverse surfaces of the ion-conducting layer (11). The first electrode (21) is formed from a metal that is capable of feeding metal ions to the ion-conducting layer (11), while the second electrode (22) is formed from a metal that does not feed metal ions to the ion-conducting layer (11). The ion-conducting layer (11) is formed from a compound containing oxygen or a metal oxide, and has an oxygen composition ratio that is less than a stoichiometric amount.</p>
申请公布号 JP5807789(B2) 申请公布日期 2015.11.10
申请号 JP20120555704 申请日期 2011.12.14
申请人 发明人
分类号 H01L49/00;H01L27/105;H01L45/00 主分类号 H01L49/00
代理机构 代理人
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