| 摘要 |
Provided is an electronic device. The electronic device according to an embodiment of the present invention is an electronic device having a semiconductor memory. The semiconductor memory comprises: a memory cell block including a word line, a first bit line crossing the word line, a first cell array including a first variable resistance layer interposed between the word line and the first bit line, a second bit line crossing the word line crossing the first bit line, and a second cell array including a second variable resistance layer interposed between the word line and the second bit line and made of material that is different from that of the first variable resistance layer; and a column control block formed to respectively supply a first light bias required for switching of the first variable resistance layer and a second light bias required for switching of the second variable resistance layer towards the first bit line and the second bit line. |
