| 发明名称 |
NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%. |
| 申请公布号 |
US2015318445(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514800852 |
申请日期 |
2015.07.16 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
CHOE Songbaek;ANZUE Naomi;KATO Ryou;YOKOGAWA Toshiya |
| 分类号 |
H01L33/40;H01L33/50;H01L33/32;H01L33/06;H01L33/16 |
主分类号 |
H01L33/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nitride-based semiconductor light-emitting device, comprising:
a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%. |
| 地址 |
Osaka JP |
