ETCH RATE ENHANCEMENT FOR A SILICON ETCH PROCESS THROUGH ETCH CHAMBER PRETREATMENT
摘要
Pretreatment of an etch chamber for performing a silicon etch process and Bosch process can be effected by running a deposition process employing C5HF7, or by running an alternating deposition and etch process employing C5H2F6 and SF6. It has been discovered that the pretreatment of the etch chamber for the silicon etch process can enhance the etch rate of silicon by at least 50% without adverse effect on etch profile during a first each process following the pretreatment, while the etch rate enhancement factor decreases over time. By periodically performing the pretreatment in the etch chamber, the throughput of the etch chamber can be increased without adversely impacting the etch profile of the processed substrates.
申请公布号
WO2015166368(A1)
申请公布日期
2015.11.05
申请号
WO2015IB52736
申请日期
2015.04.15
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;ZEON CORPORATION,;IBM UNITED KINGDOM LIMITED;IBM JAPAN LIMITED