发明名称 |
MONOLITHIC INTEGRATION OF HETEROJUNCTION SOLAR CELLS |
摘要 |
A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure. |
申请公布号 |
US2015318425(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514796546 |
申请日期 |
2015.07.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
分类号 |
H01L31/0475;H01L31/05 |
主分类号 |
H01L31/0475 |
代理机构 |
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代理人 |
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主权项 |
1. A device with integrated photovoltaic cells, comprising:
a semiconductor-on-insulator substrate having a base semiconductor, thin semiconductor layer and a buried dielectric layer therebetween, the thin semiconductor layer having alternating regions of higher and lower dopant concentration across the thin semiconductor layer; at least one doped layer formed over a first side the semiconductor layer; and a patterned conductive material formed over the least one doped layer forming conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure. |
地址 |
Armonk NY US |