发明名称 MONOLITHIC INTEGRATION OF HETEROJUNCTION SOLAR CELLS
摘要 A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.
申请公布号 US2015318425(A1) 申请公布日期 2015.11.05
申请号 US201514796546 申请日期 2015.07.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD
分类号 H01L31/0475;H01L31/05 主分类号 H01L31/0475
代理机构 代理人
主权项 1. A device with integrated photovoltaic cells, comprising: a semiconductor-on-insulator substrate having a base semiconductor, thin semiconductor layer and a buried dielectric layer therebetween, the thin semiconductor layer having alternating regions of higher and lower dopant concentration across the thin semiconductor layer; at least one doped layer formed over a first side the semiconductor layer; and a patterned conductive material formed over the least one doped layer forming conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.
地址 Armonk NY US