发明名称 |
THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME |
摘要 |
The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer. |
申请公布号 |
EP2822049(A4) |
申请公布日期 |
2015.11.04 |
申请号 |
EP20130755907 |
申请日期 |
2013.02.19 |
申请人 |
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION;LINTEC CORPORATION |
发明人 |
KATO, KUNIHISA;ADACHI, CHIHAYA;MIYAZAKI, KOJI;HAYAKAWA, TERUAKI |
分类号 |
H01L35/32;H01L35/16;H01L35/34 |
主分类号 |
H01L35/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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