发明名称 Low leakage retention register tray
摘要 A particular method includes receiving a retention signal. In response to receiving the retention signal, the method includes retaining state information in a non-volatile stage of a retention register and reducing power to a volatile stage of the retention register. The non-volatile stage may be powered by an external voltage source. The volatile stage may be powered by an internal voltage source.
申请公布号 US9178496(B2) 申请公布日期 2015.11.03
申请号 US201514605805 申请日期 2015.01.26
申请人 QUALCOMM Incorporated 发明人 Vilangudipitchai Ramaprasath;Patel Prayag Bhanubhai
分类号 H03K3/356;H03K3/012;H03K3/57;H03K19/00;G06F1/32 主分类号 H03K3/356
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. A circuit comprising: a first retention register that includes a first non-volatile region and a first volatile region; and a second retention register that includes a second non-volatile region and a second volatile region, wherein the first retention register is coupled to the second retention register, and the second volatile region comprises: a multiplexer configured to select a shift data signal from the first retention register or an input data signal according to a shift signal; anda volatile retention stage configured to latch the selected one of the shift data signal and the input data signal according to a clock signal; wherein the first non-volatile region and the second non-volatile region are located in a first n-type well (n-well) that is connected to an external voltage source, and wherein the first volatile region and the second volatile region are located in a second n-well that is connected to an internal voltage source.
地址 San Diego CA US