发明名称 |
Low leakage retention register tray |
摘要 |
A particular method includes receiving a retention signal. In response to receiving the retention signal, the method includes retaining state information in a non-volatile stage of a retention register and reducing power to a volatile stage of the retention register. The non-volatile stage may be powered by an external voltage source. The volatile stage may be powered by an internal voltage source. |
申请公布号 |
US9178496(B2) |
申请公布日期 |
2015.11.03 |
申请号 |
US201514605805 |
申请日期 |
2015.01.26 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Vilangudipitchai Ramaprasath;Patel Prayag Bhanubhai |
分类号 |
H03K3/356;H03K3/012;H03K3/57;H03K19/00;G06F1/32 |
主分类号 |
H03K3/356 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. A circuit comprising:
a first retention register that includes a first non-volatile region and a first volatile region; and a second retention register that includes a second non-volatile region and a second volatile region, wherein the first retention register is coupled to the second retention register, and the second volatile region comprises:
a multiplexer configured to select a shift data signal from the first retention register or an input data signal according to a shift signal; anda volatile retention stage configured to latch the selected one of the shift data signal and the input data signal according to a clock signal; wherein the first non-volatile region and the second non-volatile region are located in a first n-type well (n-well) that is connected to an external voltage source, and wherein the first volatile region and the second volatile region are located in a second n-well that is connected to an internal voltage source. |
地址 |
San Diego CA US |