FinFET device having a strained region

摘要

A method of fabricating a semiconductor device includes providing a substrate having a fin disposed thereon. A gate structure is formed on the fin. The gate structure interfaces at least two sides of the fin. A stress film is formed on the substrate including on the fin. The substrate including the stress film is annealed. The annealing provides a tensile strain in a channel region of the fin. For example, a compressive strain in the stress film may be transferred to form a tensile stress in the channel region of the fin.

主权项

1. A method of fabricating a fin-type field effect transistor, comprising:
providing a substrate having a plurality of fins; forming a gate structure on the fin, wherein the gate structure interfaces at least two sides of one or more of the plurality of fins; growing an epitaxial region on the substrate, wherein the epitaxial region interfaces with each of the plurality of fins;
performing a pre-amorphous implantation (PAI) process on the epitaxial region; forming a stress layer on the epitaxial region after the PAI process; and treating the substrate and the stress layer, wherein the treating transfers a stress from the stress layer to the epitaxial region.