| 发明名称 |
Magnetoresistive element and method of manufacturing the same |
| 摘要 |
According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN. |
| 申请公布号 |
US9178134(B2) |
申请公布日期 |
2015.11.03 |
| 申请号 |
US201414203198 |
申请日期 |
2014.03.10 |
| 申请人 |
|
发明人 |
Nakayama Masahiko;Kai Tadashi;Toko Masaru;Nagase Toshihiko;Yoda Hiroaki |
| 分类号 |
H01L29/00;H01L43/10;H01L43/12;H01L45/00;H01L29/82;H01L27/24;H01L27/22 |
主分类号 |
H01L29/00 |
| 代理机构 |
Holtz, Holtz, Goodman & Chick PC |
代理人 |
Holtz, Holtz, Goodman & Chick PC |
| 主权项 |
1. A magnetoresistive element comprising:
a first magnetic film; a second magnetic film; and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film, wherein the second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer, the second nonmagnetic layer containing TiN, and wherein the first magnetic layer is lattice matched with the first nonmagnetic layer. |
| 地址 |
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