| 发明名称 |
SURFACE MODIFICATION OF PHASE SHIFT MASK AND CLEANING METHOD USING THEREOF |
| 摘要 |
The present invention relates to a method for modifying a surface of a phase shift mask (PSM), and a method for cleaning using the same and, more specifically, to a method for modifying a surface of a phase shift mask having a phase shift pattern on a transparent substrate through a plasma or an annealing process, and a method for cleaning using the method for modifying the surface. |
| 申请公布号 |
KR20150122957(A) |
申请公布日期 |
2015.11.03 |
| 申请号 |
KR20140049159 |
申请日期 |
2014.04.24 |
| 申请人 |
SK HYNIX INC.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
LIM, SANG WOO;CHOO, HYEOK SEONG;SEO, DONG WAN |
| 分类号 |
H01L21/027;G03F1/26;H01L21/3065;H01L21/324 |
主分类号 |
H01L21/027 |
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