Light emitting device reflective bank structure

摘要

Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

主权项

1. A reflective bank structure comprising:
a substrate; an insulating layer on the substrate; an array of bank openings in the insulating layer, each bank opening including a bottom surface and sidewalls; a corresponding array of vertical light emitting diode devices mounted within the array of bank openings, wherein each vertical light emitting diode device in the array of vertical light emitting diode devices has a maximum width of 1 μm-100 μm and includes a micro p-n diode that includes a top p-doped or n-doped layer, a lower p-doped or n-doped layer, and one or more quantum well layers between the top and lower p-doped or n-doped layers, and wherein the micro p-n diode includes one or more layers based on II-VI materials or III-V materials; a reflective layer spanning the sidewalls of each of the bank openings in the insulating layer; and a transparent passivation layer spanning sidewalls of the array of vertical light emitting diode devices and least partially filling the array of bank openings.