Crystalline thin-film transistor

摘要

A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions. A gate stack is formed between the source and drain regions, and contacts are formed to the source and drain regions and the gate stack through a passivation layer.

主权项

1. A method for forming a thin film transistor, comprising:
joining a crystalline substrate to an insulating substrate by layer transfer and bonding; depositing a doped layer on an entire upper surface of the crystalline substrate after said joining of the crystalline substrate to the insulating substrate; patterning the doped layer after said depositing the doped layer on the crystalline substrate to remove the portion of the doped layer that is present directly on a channel portion of the crystalline substrate, and to form source and drain regions, wherein an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions; forming a gate stack between the source and drain regions; and forming contacts to the source and drain regions and the gate stack through a passivation layer.