发明名称 PHOTODIODE ARRAY
摘要 A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.
申请公布号 US2015311358(A1) 申请公布日期 2015.10.29
申请号 US201314647263 申请日期 2013.11.26
申请人 HAMMATSU PHOTONICS K.K. 发明人 YAMANAKA Tatsumi;SAKAMOTO Akira;HOSOKAWA Noburo
分类号 H01L31/0224;H01L27/146 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A photodiode array comprising a plurality of photodiodes formed in a semiconductor substrate, wherein each of the photodiodes includes: a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate; a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region; and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.
地址 Hamamatsu-shi JP