| 发明名称 |
METHOD TO CO-INTEGRATE OPPOSITELY STRAINED SEMICONDUCTOR DEVICES ON A SAME SUBSTRATE |
| 摘要 |
Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently. |
| 申请公布号 |
US2015303218(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201414253904 |
申请日期 |
2014.04.16 |
| 申请人 |
Commissariat à l'Énergie Atomique et aux Énergies Alternatives ;STMicroelectronics, Inc. |
发明人 |
Loubet Nicolas;Maitrejean Sylvain;Wacquez Romain |
| 分类号 |
H01L27/12;H01L29/16;H01L29/161;H01L29/165;H01L27/092;H01L21/8238;H01L29/78;H01L29/06;H01L21/762;H01L21/265;H01L21/324;H01L21/02;H01L21/266;H01L21/306;H01L21/84 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
Paris FR |
