| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wafer-processing adhesive tape for semiconductors, which can obtain a semiconductor device with superior performance characteristics by going through a heat hysteresis as well.SOLUTION: A wafer-processing adhesive tape 100 for semiconductors comprises a laminate including a base material 4 and an adhesive layer 2 laminated on the base material 4, and satisfies the following requirements A and B. Requirement A: the weight decrease rate A of the adhesive layer should be 0.00001-2.0 wt% on condition that the wafer-processing adhesive tape for semiconductors is heated from a room temperature of 25°C to 100°C at a temperature-rising rate of 5°C/min in accordance with testing methods of plastics by thermogravimetry defined by JIS K7120. Requirement B: the weight decrease rate B of the adhesive layer should be 1.0-10.0 wt% on condition that the wafer-processing adhesive tape for semiconductors is heated from a room temperature of 25°C to 260°C at a temperature-rising rate of 5°C/min in accordance with testing methods of plastics by thermogravimetry defined by JIS K7120.</p> |
