| 摘要 |
The device has a support plate (2) formed on a power semiconductor component, where the semiconductor component partially encloses a housing (1). The power semiconductor component is electrically connected with power and control terminals, which are led out from the housing. Power terminals (4-6) are arranged on a side of the housing. Control terminals (7-12) are arranged on another side of the housing. Distance (a) between the adjacent power terminals is greater than the distance (b) between adjacent control terminals. The power semiconductor component is designed as an insulated gate bipolar transistor. |
