发明名称 |
IMPROVED EPITAXIAL GROWTH BETWEEN GATES |
摘要 |
An integrated circuit device includes at least two epitaxially grown active regions grown onto a substrate, and the active regions are placed between two gate devices. The integrated circuit device further includes at least one dummy gate between the two epitaxially grown active regions. Each active region is substantially uniform in length. |
申请公布号 |
KR20150118059(A) |
申请公布日期 |
2015.10.21 |
申请号 |
KR20150134065 |
申请日期 |
2015.09.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN WUN JIE;TSENG JEN CHOU;SONG MING HSIANG |
分类号 |
H01L27/02;H01L21/20;H01L29/78 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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