| 发明名称 | Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus | ||
| 摘要 | A semiconductor device includes a base substrate and first and second semiconductor wires which are arranged side by side on the base substrate, and the base substrate is provided with an opening (inter-wire grove, slit) in an extending direction of the first and second semiconductor wires between the first semiconductor wire and the second semiconductor wire. | ||
| 申请公布号 | US9165874(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201313860107 | 申请日期 | 2013.04.10 |
| 申请人 | Seiko Epson Corporation | 发明人 | Furuhata Makoto |
| 分类号 | H01L29/24;G01C19/56;H01L23/498;H01L21/768;B81B3/00 | 主分类号 | H01L29/24 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A semiconductor device comprising: a base substrate; first and second semiconductor wires which are arranged side by side on the base substrate; a drive mass portion configured to be oscillated by a drive portion; wherein the base substrate is provided with an opening in an extending direction of the first and second semiconductor wires between the first semiconductor wire and the second semiconductor wire; the drive portion includes fixed electrodes and movable electrodes; the first semiconductor wire is connected to the fixed electrodes; and the second semiconductor wire is connected to the movable electrodes. | ||
| 地址 | JP | ||