发明名称 Semiconductor integrated circuit device, method of controlling semiconductor integrated circuit device, and cache device
摘要 There are provided a semiconductor integrated circuit device, a method of controlling a semiconductor integrated circuit device, and a cache device capable of efficiently implementing power saving, wherein the cache device includes a low-voltage operation enabling cache (200), and a small-area cache (300) having a type different from that of the cache (200), the cache (200) and the cache (300) being independently supplied with source voltage; the cache (200) being operable at a voltage lower than the lower limit voltage at which the cache (300) is operable; a cache control unit (400) operating switchable controls between a first mode allowing only the cache (200) to operate, and a second mode allowing the cache (200) or the cache (300) to operate; and the cache (200) in the first mode operating to supply a voltage below the lower limit voltage at which the cache (300) is operable, while interrupting power supply to the cache (300).
申请公布号 US9164905(B2) 申请公布日期 2015.10.20
申请号 US201013393814 申请日期 2010.08.18
申请人 NEC CORPORATION 发明人 Inoue Hiroaki
分类号 G06F12/00;G06F12/08 主分类号 G06F12/00
代理机构 McGinn IP Law Group, PLLC. 代理人 McGinn IP Law Group, PLLC.
主权项 1. A method of controlling a semiconductor integrated circuit device, said semiconductor integrated circuit device comprising a cache which includes a first storage device, and a second storage device having a type different from that of said first storage device, said cache being interposed between a processor and a memory and being connected to the processor and the memory, and said cache being configured to cache therein data of the memory, and said first storage device being configured to operate at a voltage below the lower limit voltage at which said second storage device is configured to operate, said method comprising: supplying a first source voltage and a second source voltage independently to said first storage device and said second storage device, respectively, said first source voltage being lower than said second source voltage; operating, by a control unit for controlling said semiconductor integrated circuit device, switchable controls between a first mode allowing only said first storage device of said cache to operate, and a second mode allowing said first storage device or said second storage device of said cache to operate; operating, in said first mode, by a power supply unit, to the first source voltage which is set lower than the lower limit voltage at which said second storage device of said cache is configured to operate, to said first storage device of said cache, while, by said control unit, interrupting power supply to said second storage device of said cache from said power supply unit; and said control unit, in said first mode, accessing said first storage device of cache in accordance with a request to access the data in the memory from the processor, and in said second mode, accessing at least one of said first storage device and said second storage device of said cache in accordance with the request to access the data in the memory from the processor.
地址 Tokyo JP